GROWTH OF INGAAS/INALAS SUPERLATTICES BY MOCVD AND PRECISE THICKNESS DETERMINATION VIA HRXRD

Ilkay Demir, Sezai Elagöz
1.814 546

Abstract


In this study, we report the growth studies of InGaAs/InAlAs superlattices (SLs) with thin layer thicknesses which will be used for quantum cascade laser (QCL) structures, grown by Metal Organic Chemical Vapor Deposition (MOCVD) technique.  We utilize high resolution X-ray diffraction (HRXRD) to determine the single layer thickness and period thicknesses of SLs. Measurement results show that by establishing very low growth rates (~0,1 nm/s), the single thin layers and SLs can be grown well by MOCVD in a  controllable and repeatable way with high crystalline and interface quality.


Keywords


Superlattice; InGaAs; InAlAs; MOCVD; X-ray diffraction

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References


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