Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurement

Adem TATAROĞLU, G. G. GÜVEN, S. YILMAZ, A. BÜYÜKBAŞ
1.928 418

Abstract


Capacitance (C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency. The 1/C2-V curves are linear in the wide voltage region for each frequency. This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also, the barrier height (FB) and carrier (donor) concentration (ND) were obtained from C-2-V characteristics. The values of the ΦB and NDdecrease with the increasing frequency.


Keywords


MOS capacitor; C-f and G/ω-f characteristics; Barrier height; Donor concentration

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