ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Mehmet KASAP, Selim ACAR, Bora ALKAN
1.382 448

Abstract


To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment.

 Key Words: Hall mobility, dislocation scattering, Kubo formula

 


Keywords


Hall mobility, dislocation scattering, Kubo formula

Full Text:

PDF