Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures
The electrical properties of Au/Bi4Ti3O12/SnO2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/w-V measurements. The results indicate structural disordering, presence of the interface states in the BTO capacitors and existence of polarization. Dielectric constant(e'), dielectric loss(e'') and dielectric tangent(tand) were found as 170, 309 and 1,8 respectively at 50 kHz. C-V and G/w-V were measured in the frequency range of 1 kHz-5 MHz. It was found that dielectric constant(e') and dielectric loss(e'') systematically decrease with increasing frequency in 10 kHz-1 MHz frequency range and tand versus frequency plot exhibits a minimum at about 5 kHz. The ideality factor and series resistance were found to be 1,5 and 1030 W respectively from I-V measurements and series resistance was found as 350 W from the measured conductance in strong accumulation region. The observations are comparable with the other values for BTO structures reported in the literature.
Au/Bi4Ti3O12/SnO2 structures, Dielectric constant, Dielectric loss, Frequency dependence, Series Resistence